TY - GEN
T1 - Czochralski growth and scintillation properties of bismuth germanium silicon oxide (BGSO) single crystals
AU - Jiang, Hua
AU - Kim, H. J.
AU - Rooh, Gul
AU - Park, H.
AU - Kim, Sunghwan
AU - Fawad, U.
AU - Cheon, Jongkyu
PY - 2011
Y1 - 2011
N2 - We present our initial results on the crystal growth and scintillation properties of bismuth germanium silicon oxide Bi4 (Ge 1-xSix)3 O12 (BGSO) with x = 0.2, 0.3, 0.7, 0.8 single crystals. For the preparation of BGSO samples, various proportions of Bi4Ge3O12 (BGO) and Bi 4Si3O12 (BSO) are mixed and grown by Czochralski technique. By employing suitable rotation and pulling rates, good quality crystals of BGSO have been grown from the solution melt. Problems during growth process, such as non-transparency and cracks of these materials have been addressed. Structure analyses of the grown samples are studied by X-ray diffraction (XRD). X-ray induced emission spectrum shows a broad emission band in the wavelength range from 350 to 700 nm for the grown samples with different values of x. Scintillation properties such as energy resolution, light yield, and decay time are studied.
AB - We present our initial results on the crystal growth and scintillation properties of bismuth germanium silicon oxide Bi4 (Ge 1-xSix)3 O12 (BGSO) with x = 0.2, 0.3, 0.7, 0.8 single crystals. For the preparation of BGSO samples, various proportions of Bi4Ge3O12 (BGO) and Bi 4Si3O12 (BSO) are mixed and grown by Czochralski technique. By employing suitable rotation and pulling rates, good quality crystals of BGSO have been grown from the solution melt. Problems during growth process, such as non-transparency and cracks of these materials have been addressed. Structure analyses of the grown samples are studied by X-ray diffraction (XRD). X-ray induced emission spectrum shows a broad emission band in the wavelength range from 350 to 700 nm for the grown samples with different values of x. Scintillation properties such as energy resolution, light yield, and decay time are studied.
UR - http://www.scopus.com/inward/record.url?scp=84863386998&partnerID=8YFLogxK
U2 - 10.1109/NSSMIC.2011.6154635
DO - 10.1109/NSSMIC.2011.6154635
M3 - Conference contribution
AN - SCOPUS:84863386998
SN - 9781467301183
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 1580
EP - 1582
BT - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Y2 - 23 October 2011 through 29 October 2011
ER -