Czochralski growth and scintillation properties of Bi4Si 3O12 (BSO) single crystal

Jiang Hua; H. J. Kim; Gul Rooh; H. Park; Sunghwan Kim; Jongkyu Cheon

doi:10.1016/j.nima.2011.05.043

Czochralski growth and scintillation properties of Bi₄Si ₃O₁₂ (BSO) single crystal

Jiang Hua, H. J. Kim, Gul Rooh, H. Park, Sunghwan Kim, Jongkyu Cheon

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have successfully grown crack free BSO (Bi₄Si ₃O₁₂) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.

Original language	English
Pages (from-to)	73-76
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	648
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2011.05.043
State	Published - 21 Aug 2011

Keywords

BSO
Crystal scintillator
Czochralski
Energy resolution
Luminescence

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title = "Czochralski growth and scintillation properties of Bi4Si 3O12 (BSO) single crystal",

abstract = "We have successfully grown crack free BSO (Bi4Si 3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.",

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AU - Hua, Jiang

AU - Kim, H. J.

AU - Rooh, Gul

AU - Park, H.

AU - Kim, Sunghwan

AU - Cheon, Jongkyu

PY - 2011/8/21

Y1 - 2011/8/21

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AB - We have successfully grown crack free BSO (Bi4Si 3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.

KW - BSO

KW - Crystal scintillator

KW - Czochralski

KW - Energy resolution

KW - Luminescence

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Czochralski growth and scintillation properties of Bi₄Si ₃O₁₂ (BSO) single crystal

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Keywords

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