Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

Donghyi Koh; Seung Heon Shin; Jaehyun Ahn; Sushant Sonde; Hyuk Min Kwon; Tommaso Orzali; Dae Hyun Kim; Tae Woo Kim; Sanjay K. Banerjee

doi:10.1063/1.4935248

Damage free Ar ion plasma surface treatment on In_0.53Ga_0.47As-on-silicon metal-oxide-semiconductor device

Donghyi Koh, Seung Heon Shin, Jaehyun Ahn, Sushant Sonde, Hyuk Min Kwon, Tommaso Orzali, Dae Hyun Kim, Tae Woo Kim, Sanjay K. Banerjee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In_0.53Ga_0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In_0.53Ga_0.47As. The XPS spectra of Ar treated In_0.53Ga_0.47As show a decrease in the AsO_x and GaO_x signal intensities, and the MOSCAPs show higher accumulation capacitance (C_acc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D_it), which thereby led to a reduction in the threshold voltage (V_th) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

Original language	English
Article number	183509
Journal	Applied Physics Letters
Volume	107
Issue number	18
DOIs	https://doi.org/10.1063/1.4935248
State	Published - 2 Nov 2015

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@article{235209c3fb5346dbbbe2a8593e34092b,

title = "Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device",

abstract = "In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.",

author = "Donghyi Koh and Shin, {Seung Heon} and Jaehyun Ahn and Sushant Sonde and Kwon, {Hyuk Min} and Tommaso Orzali and Kim, {Dae Hyun} and Kim, {Tae Woo} and Banerjee, {Sanjay K.}",

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doi = "10.1063/1.4935248",

language = "English",

volume = "107",

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T1 - Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

AU - Koh, Donghyi

AU - Shin, Seung Heon

AU - Ahn, Jaehyun

AU - Sonde, Sushant

AU - Kwon, Hyuk Min

AU - Orzali, Tommaso

AU - Kim, Dae Hyun

AU - Kim, Tae Woo

AU - Banerjee, Sanjay K.

PY - 2015/11/2

Y1 - 2015/11/2

N2 - In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

AB - In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Damage free Ar ion plasma surface treatment on In_0.53Ga_0.47As-on-silicon metal-oxide-semiconductor device

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