DC and RF analysis of geometrical parameter changes in the current aperture vertical electron transistor

Hye Su Kang; Jae Hwa Seo; Young Jun Yoon; Min Su Cho; In Man Kang

doi:10.5370/JEET.2016.11.6.1763

DC and RF analysis of geometrical parameter changes in the current aperture vertical electron transistor

Hye Su Kang
, Jae Hwa Seo
, Young Jun Yoon
, Min Su Cho
, In Man Kang

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L_GS) and aperture length (L_AP). We analyze DC and RF parameters inducing on-state current (I_on), threshold voltage (V_t), breakdown voltage (V_B), transconductance (g_m), gate capacitance (C_gg), cut-off frequency (f_T), and maximum oscillation frequency (f_max).

Original language	English
Pages (from-to)	1763-1768
Number of pages	6
Journal	Journal of Electrical Engineering and Technology
Volume	11
Issue number	6
DOIs	https://doi.org/10.5370/JEET.2016.11.6.1763
State	Published - Nov 2016

Keywords

Current aperture vertical electron transistor (CAVET)
Gallium nitride (GaN)
TCAD
Vertical transistor

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10.5370/JEET.2016.11.6.1763

Cite this

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title = "DC and RF analysis of geometrical parameter changes in the current aperture vertical electron transistor",

abstract = "This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (LGS) and aperture length (LAP). We analyze DC and RF parameters inducing on-state current (Ion), threshold voltage (Vt), breakdown voltage (VB), transconductance (gm), gate capacitance (Cgg), cut-off frequency (fT), and maximum oscillation frequency (fmax).",

keywords = "Current aperture vertical electron transistor (CAVET), Gallium nitride (GaN), TCAD, Vertical transistor",

author = "Kang, \{Hye Su\} and Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Cho, \{Min Su\} and Kang, \{In Man\}",

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language = "English",

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T1 - DC and RF analysis of geometrical parameter changes in the current aperture vertical electron transistor

AU - Kang, Hye Su

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Cho, Min Su

AU - Kang, In Man

N1 - Publisher Copyright: © The Korean Institute of Electrical Engineers.

PY - 2016/11

Y1 - 2016/11

N2 - This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (LGS) and aperture length (LAP). We analyze DC and RF parameters inducing on-state current (Ion), threshold voltage (Vt), breakdown voltage (VB), transconductance (gm), gate capacitance (Cgg), cut-off frequency (fT), and maximum oscillation frequency (fmax).

AB - This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (LGS) and aperture length (LAP). We analyze DC and RF parameters inducing on-state current (Ion), threshold voltage (Vt), breakdown voltage (VB), transconductance (gm), gate capacitance (Cgg), cut-off frequency (fT), and maximum oscillation frequency (fmax).

KW - Current aperture vertical electron transistor (CAVET)

KW - Gallium nitride (GaN)

KW - TCAD

KW - Vertical transistor

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DO - 10.5370/JEET.2016.11.6.1763

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EP - 1768

JO - Journal of Electrical Engineering and Technology

JF - Journal of Electrical Engineering and Technology

IS - 6

ER -

DC and RF analysis of geometrical parameter changes in the current aperture vertical electron transistor

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Keywords

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