Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET

Jeong Hoon Seol; Hee Sung Kang; Gil Ho Lee; Jung Hee Lee; Sung Ho Hahm

doi:10.1149/07512.0131ecst

Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET

Jeong Hoon Seol, Hee Sung Kang, Gil Ho Lee, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.

Original language	English
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies 6
Editors	M. Dudley, M. Bakowski, N. Ohtani, K. Shenai, B. Raghothamachar
Publisher	Electrochemical Society Inc.
Pages	131-137
Number of pages	7
Edition	12
ISBN (Electronic)	9781607687290, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07512.0131ecst
State	Published - 2016
Event	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2 Oct 2016 → 7 Oct 2016

Publication series

Name	ECS Transactions
Number	12
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	2/10/16 → 7/10/16

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10.1149/07512.0131ecst

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Seol, J. H., Kang, H. S., Lee, G. H., Lee, J. H., & Hahm, S. H. (2016). Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET. In M. Dudley, M. Bakowski, N. Ohtani, K. Shenai, & B. Raghothamachar (Eds.), Gallium Nitride and Silicon Carbide Power Technologies 6 (12 ed., pp. 131-137). (ECS Transactions; Vol. 75, No. 12). Electrochemical Society Inc.. https://doi.org/10.1149/07512.0131ecst

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title = "Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET",

abstract = "We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.",

author = "Seol, {Jeong Hoon} and Kang, {Hee Sung} and Lee, {Gil Ho} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07512.0131ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "12",

pages = "131--137",

editor = "M. Dudley and M. Bakowski and N. Ohtani and K. Shenai and B. Raghothamachar",

booktitle = "Gallium Nitride and Silicon Carbide Power Technologies 6",

address = "United States",

edition = "12",

}

Seol, JH, Kang, HS, Lee, GH, Lee, JH & Hahm, SH 2016, Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET. in M Dudley, M Bakowski, N Ohtani, K Shenai & B Raghothamachar (eds), Gallium Nitride and Silicon Carbide Power Technologies 6. 12 edn, ECS Transactions, no. 12, vol. 75, Electrochemical Society Inc., pp. 131-137, Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2/10/16. https://doi.org/10.1149/07512.0131ecst

Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET. / Seol, Jeong Hoon; Kang, Hee Sung; Lee, Gil Ho et al.
Gallium Nitride and Silicon Carbide Power Technologies 6. ed. / M. Dudley; M. Bakowski; N. Ohtani; K. Shenai; B. Raghothamachar. 12. ed. Electrochemical Society Inc., 2016. p. 131-137 (ECS Transactions; Vol. 75, No. 12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET

AU - Seol, Jeong Hoon

AU - Kang, Hee Sung

AU - Lee, Gil Ho

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2016

Y1 - 2016

N2 - We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.

AB - We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.

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DO - 10.1149/07512.0131ecst

M3 - Conference contribution

AN - SCOPUS:84991442468

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BT - Gallium Nitride and Silicon Carbide Power Technologies 6

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A2 - Bakowski, M.

A2 - Ohtani, N.

A2 - Shenai, K.

A2 - Raghothamachar, B.

PB - Electrochemical Society Inc.

T2 - Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Deep trap levels responsible for current collapse in AlGaN/GaN MISHFET

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