Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

H. Zhong; A. Tyagi; N. N. Fellows; R. B. Chung; M. Saito; K. Fujito; J. S. Speck; S. P. Denbaars; S. Nakamura

doi:10.1049/el:20071323

Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

H. Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. Denbaars, S. Nakamura

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480nm were grown on low extended defect density semipolar (112̄2) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20mA under pulsed operations (10 duty cycle) were 18 and 9mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5nm) with drive currents ranging from 30 to 100mA, indicating significant reduction of polarisation-related internal electric fields.

Original language	English
Pages (from-to)	825-827
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	15
DOIs	https://doi.org/10.1049/el:20071323
State	Published - 2007

Access to Document

10.1049/el:20071323

Cite this

@article{933878dc1ddc419eb1201dec6b00b6f8,

title = "Demonstration of high power blue-green light emitting diode on semipolar (11{\=2}2) bulk GaN substrate",

abstract = "Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480nm were grown on low extended defect density semipolar (11{\=2}2) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20mA under pulsed operations (10 duty cycle) were 18 and 9mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5nm) with drive currents ranging from 30 to 100mA, indicating significant reduction of polarisation-related internal electric fields.",

author = "H. Zhong and A. Tyagi and Fellows, {N. N.} and Chung, {R. B.} and M. Saito and K. Fujito and Speck, {J. S.} and Denbaars, {S. P.} and S. Nakamura",

year = "2007",

doi = "10.1049/el:20071323",

language = "English",

volume = "43",

pages = "825--827",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "15",

}

TY - JOUR

T1 - Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

AU - Zhong, H.

AU - Tyagi, A.

AU - Fellows, N. N.

AU - Chung, R. B.

AU - Saito, M.

AU - Fujito, K.

AU - Speck, J. S.

AU - Denbaars, S. P.

AU - Nakamura, S.

PY - 2007

Y1 - 2007

N2 - Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480nm were grown on low extended defect density semipolar (112̄2) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20mA under pulsed operations (10 duty cycle) were 18 and 9mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5nm) with drive currents ranging from 30 to 100mA, indicating significant reduction of polarisation-related internal electric fields.

AB - Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480nm were grown on low extended defect density semipolar (112̄2) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20mA under pulsed operations (10 duty cycle) were 18 and 9mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5nm) with drive currents ranging from 30 to 100mA, indicating significant reduction of polarisation-related internal electric fields.

UR - http://www.scopus.com/inward/record.url?scp=34547177722&partnerID=8YFLogxK

U2 - 10.1049/el:20071323

DO - 10.1049/el:20071323

M3 - Article

AN - SCOPUS:34547177722

SN - 0013-5194

VL - 43

SP - 825

EP - 827

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this