Abstract
We investigate the characteristics of a synaptic imitation device using a thin-film transistor (TFT)-type NOR flash memory cell with a half-covered floating gate. The long-term potentiation (LTP) and long-term depression (LTD) required for the operation of the spike-timing-dependent plasticity (STDP) algorithm are implemented using the proposed pulse scheme. Unsupervised learning is successfully demonstrated by applying the STDP learning rule through software MATLAB simulation reflecting the LTP/LTD characteristics of the fabricated TFT-type NOR flash memory array. We present the learning and recognition processes of 28×28 MNIST handwritten digit patterns. First, STDP learning in a single-neuron string ( 784×1) is investigated, after which STDP learning is demonstrated in a multineuron array (784×10) with a lateral inhibition function to demonstrate the ability of multipattern learning and recognition. Meanwhile, we investigate the key factors of STDP unsupervised learning. Finally, an approach is suggested to implement a hardware neural network using the conventional CMOS technology for STDP unsupervised learning as a visual pattern recognition system.
Original language | English |
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Pages (from-to) | 1774-1780 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 65 |
Issue number | 5 |
DOIs | |
State | Published - May 2018 |
Keywords
- Neuromorphic
- NOR flash memory
- pattern recognition
- spike-timing-dependent plasticity (STDP)
- thin-film transistor (TFT)
- unsupervised learning