Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

Gwan Min Yoo; Jae Hwa Seo; Young Jun Yoon; Young Jae Kim; Sung Yoon Kim; Hye Su Kang; Hye Rim Eun; Ra Hee Kwon; Young In Jang; In Man Kang; Seong Min Lee; Seongjae Cho

doi:10.1109/ISCE.2014.6884475

Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

Gwan Min Yoo, Jae Hwa Seo, Young Jun Yoon, Young Jae Kim, Sung Yoon Kim, Hye Su Kang, Hye Rim Eun, Ra Hee Kwon, Young In Jang, In Man Kang, Seong Min Lee, Seongjae Cho

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (I_on) and off-state (I_off) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10^-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD).

Original language	English
Title of host publication	ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479945924
DOIs	https://doi.org/10.1109/ISCE.2014.6884475
State	Published - 2014
Event	18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of Duration: 22 Jun 2014 → 25 Jun 2014

Publication series

Name	Proceedings of the International Symposium on Consumer Electronics, ISCE

Conference

Conference	18th IEEE International Symposium on Consumer Electronics, ISCE 2014
Country/Territory	Korea, Republic of
City	Jeju
Period	22/06/14 → 25/06/14

Keywords

3-D TCAD
fin design
fin-shaped channel
FinFET
GaN
heterostructures
power transistor
recessed gate

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10.1109/ISCE.2014.6884475

Cite this

Yoo, G. M., Seo, J. H., Yoon, Y. J., Kim, Y. J., Kim, S. Y., Kang, H. S., Eun, H. R., Kwon, R. H., Jang, Y. I., Kang, I. M., Lee, S. M., & Cho, S. (2014). Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics Article 6884475 (Proceedings of the International Symposium on Consumer Electronics, ISCE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2014.6884475

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title = "Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET",

abstract = "In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD).",

keywords = "3-D TCAD, fin design, fin-shaped channel, FinFET, GaN, heterostructures, power transistor, recessed gate",

author = "Yoo, {Gwan Min} and Seo, {Jae Hwa} and Yoon, {Young Jun} and Kim, {Young Jae} and Kim, {Sung Yoon} and Kang, {Hye Su} and Eun, {Hye Rim} and Kwon, {Ra Hee} and Jang, {Young In} and Kang, {In Man} and Lee, {Seong Min} and Seongjae Cho",

year = "2014",

doi = "10.1109/ISCE.2014.6884475",

language = "English",

isbn = "9781479945924",

series = "Proceedings of the International Symposium on Consumer Electronics, ISCE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics",

address = "United States",

note = "18th IEEE International Symposium on Consumer Electronics, ISCE 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

}

Yoo, GM, Seo, JH, Yoon, YJ, Kim, YJ, Kim, SY, Kang, HS, Eun, HR, Kwon, RH, Jang, YI, Kang, IM, Lee, SM & Cho, S 2014, Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET. in ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics., 6884475, Proceedings of the International Symposium on Consumer Electronics, ISCE, Institute of Electrical and Electronics Engineers Inc., 18th IEEE International Symposium on Consumer Electronics, ISCE 2014, Jeju, Korea, Republic of, 22/06/14. https://doi.org/10.1109/ISCE.2014.6884475

Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET. / Yoo, Gwan Min; Seo, Jae Hwa; Yoon, Young Jun et al.
ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014. 6884475 (Proceedings of the International Symposium on Consumer Electronics, ISCE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

AU - Yoo, Gwan Min

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Kim, Young Jae

AU - Kim, Sung Yoon

AU - Kang, Hye Su

AU - Eun, Hye Rim

AU - Kwon, Ra Hee

AU - Jang, Young In

AU - Kang, In Man

AU - Lee, Seong Min

AU - Cho, Seongjae

PY - 2014

Y1 - 2014

N2 - In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD).

AB - In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD).

KW - 3-D TCAD

KW - fin design

KW - fin-shaped channel

KW - FinFET

KW - GaN

KW - heterostructures

KW - power transistor

KW - recessed gate

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U2 - 10.1109/ISCE.2014.6884475

DO - 10.1109/ISCE.2014.6884475

M3 - Conference contribution

AN - SCOPUS:84907415533

SN - 9781479945924

T3 - Proceedings of the International Symposium on Consumer Electronics, ISCE

BT - ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE International Symposium on Consumer Electronics, ISCE 2014

Y2 - 22 June 2014 through 25 June 2014

ER -

Yoo GM, Seo JH, Yoon YJ, Kim YJ, Kim SY, Kang HS et al. Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc. 2014. 6884475. (Proceedings of the International Symposium on Consumer Electronics, ISCE). doi: 10.1109/ISCE.2014.6884475

Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

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