Abstract
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
| Original language | English |
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| Pages (from-to) | 17554-17559 |
| Number of pages | 6 |
| Journal | Optics Express |
| Volume | 16 |
| Issue number | 22 |
| DOIs | |
| State | Published - 27 Oct 2008 |