Depletion-mode ZnO nanowire field-effect transistor

Y. W. Heo; L. C. Tien; Y. Kwon; D. P. Norton; S. J. Pearton; B. S. Kang; F. Ren

doi:10.1063/1.1794351

Depletion-mode ZnO nanowire field-effect transistor

Y. W. Heo, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, F. Ren

University of Florida

Research output: Contribution to journal › Article › peer-review

266 Scopus citations

Abstract

The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

Original language	English
Pages (from-to)	2274-2276
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1794351
State	Published - 20 Sep 2004

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title = "Depletion-mode ZnO nanowire field-effect transistor",

abstract = "The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.",

author = "Heo, {Y. W.} and Tien, {L. C.} and Y. Kwon and Norton, {D. P.} and Pearton, {S. J.} and Kang, {B. S.} and F. Ren",

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AU - Heo, Y. W.

AU - Tien, L. C.

AU - Kwon, Y.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kang, B. S.

AU - Ren, F.

PY - 2004/9/20

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N2 - The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

AB - The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

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Depletion-mode ZnO nanowire field-effect transistor

Abstract

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