Depletion-mode ZnO nanowire field-effect transistor

Y. W. Heo; L. C. Tien; Y. Kwon; D. P. Norton; S. J. Pearton; B. S. Kang; F. Ren

doi:10.1063/1.1794351

Depletion-mode ZnO nanowire field-effect transistor

Y. W. Heo
, L. C. Tien
, Y. Kwon
, D. P. Norton
, S. J. Pearton
, B. S. Kang
, F. Ren

University of Florida

Research output: Contribution to journal › Article › peer-review

270 Scopus citations

Abstract

The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

Original language	English
Pages (from-to)	2274-2276
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1794351
State	Published - 20 Sep 2004

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10.1063/1.1794351

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title = "Depletion-mode ZnO nanowire field-effect transistor",

abstract = "The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.",

author = "Heo, \{Y. W.\} and Tien, \{L. C.\} and Y. Kwon and Norton, \{D. P.\} and Pearton, \{S. J.\} and Kang, \{B. S.\} and F. Ren",

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AU - Heo, Y. W.

AU - Tien, L. C.

AU - Kwon, Y.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kang, B. S.

AU - Ren, F.

PY - 2004/9/20

Y1 - 2004/9/20

N2 - The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

AB - The dc performance of single depletion-mode ZnO nanowire metalo-oxide-semiconductor field-effect transistors (MOSFET) using various gate oxides was investigated. These MOSFETs were grown by using site selective molecular-beam epitaxy method. Selected area diffraction patterns revealed the single crystalline character of the nanowires. The results indicate the excellent pinch-off and saturation characteristics with low gate leakage currents of these MOSFETs.

UR - https://www.scopus.com/pages/publications/7044222794

U2 - 10.1063/1.1794351

DO - 10.1063/1.1794351

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VL - 85

SP - 2274

EP - 2276

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Depletion-mode ZnO nanowire field-effect transistor

Abstract

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