Design and analysis of AlGaN/GaN MIS HEMTs with a dual-metal-gate structure

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (ф), with the metal of higher ф in the source-side gate, and the metal of lower ф in the drain-side gate. As a result of the different ф values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.