Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

Young In Jang; Jae Hwa Seo; Young Jun Yoon; Hye Rim Eun; Ra Hee Kwon; Jung Hee Lee; Hyuck In Kwon; In Man Kang

doi:10.5573/JSTS.2015.15.5.554

Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

Young In Jang, Jae Hwa Seo, Young Jun Yoon, Hye Rim Eun, Ra Hee Kwon, Jung Hee Lee, Hyuck In Kwon, In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (W_fin) and the height of GaN layer (H_GaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

Original language	English
Pages (from-to)	554-562
Number of pages	9
Journal	Journal of Semiconductor Technology and Science
Volume	15
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2015.15.5.554
State	Published - Oct 2015

Keywords

3-D TCAD
AlGaN/GaN
Fin-type field-effect transistor (FinFET)
Recessed gate

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10.5573/JSTS.2015.15.5.554

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title = "Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor",

abstract = "This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.",

keywords = "3-D TCAD, AlGaN/GaN, Fin-type field-effect transistor (FinFET), Recessed gate",

author = "Jang, \{Young In\} and Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Eun, \{Hye Rim\} and Kwon, \{Ra Hee\} and Lee, \{Jung Hee\} and Kwon, \{Hyuck In\} and Kang, \{In Man\}",

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T1 - Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

AU - Jang, Young In

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Eun, Hye Rim

AU - Kwon, Ra Hee

AU - Lee, Jung Hee

AU - Kwon, Hyuck In

AU - Kang, In Man

PY - 2015/10

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N2 - This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

AB - This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

KW - 3-D TCAD

KW - AlGaN/GaN

KW - Fin-type field-effect transistor (FinFET)

KW - Recessed gate

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JO - Journal of Semiconductor Technology and Science

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ER -

Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

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