Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

Young In Jang; Jae Hwa Seo; Young Jun Yoon; Hye Rim Eun; Ra Hee Kwon; Jung Hee Lee; Hyuck In Kwon; In Man Kang

doi:10.5573/JSTS.2015.15.5.554

Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

Young In Jang
, Jae Hwa Seo
, Young Jun Yoon
, Hye Rim Eun
, Ra Hee Kwon
, Jung Hee Lee
, Hyuck In Kwon
, In Man Kang

School of Electronics Engineering

Kyungpook National University
Chung-Ang University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (W_fin) and the height of GaN layer (H_GaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

Original language	English
Pages (from-to)	554-562
Number of pages	9
Journal	Journal of Semiconductor Technology and Science
Volume	15
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2015.15.5.554
State	Published - Oct 2015

Keywords

3-D TCAD
AlGaN/GaN
Fin-type field-effect transistor (FinFET)
Recessed gate

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10.5573/JSTS.2015.15.5.554

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title = "Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor",

abstract = "This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.",

keywords = "3-D TCAD, AlGaN/GaN, Fin-type field-effect transistor (FinFET), Recessed gate",

author = "Jang, \{Young In\} and Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Eun, \{Hye Rim\} and Kwon, \{Ra Hee\} and Lee, \{Jung Hee\} and Kwon, \{Hyuck In\} and Kang, \{In Man\}",

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doi = "10.5573/JSTS.2015.15.5.554",

language = "English",

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publisher = "Institute of Electronics Engineers of Korea",

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T1 - Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

AU - Jang, Young In

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Eun, Hye Rim

AU - Kwon, Ra Hee

AU - Lee, Jung Hee

AU - Kwon, Hyuck In

AU - Kang, In Man

PY - 2015/10

Y1 - 2015/10

N2 - This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

AB - This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (Wfin) and the height of GaN layer (HGaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.

KW - 3-D TCAD

KW - AlGaN/GaN

KW - Fin-type field-effect transistor (FinFET)

KW - Recessed gate

UR - https://www.scopus.com/pages/publications/84945950033

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DO - 10.5573/JSTS.2015.15.5.554

M3 - Article

AN - SCOPUS:84945950033

SN - 1598-1657

VL - 15

SP - 554

EP - 562

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

Design and analysis of gate-recessed AlGaN/GaN fin-type field-effect transistor

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