Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube

Jin-Hyuk Bae

Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4235
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
State	Published - 2021

Cite this

@article{92ae254cfc994be0975b2d6b462e24ee,

title = "Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube",

author = "Jin-Hyuk Bae",

year = "2021",

language = "English",

volume = "21",

pages = "4235",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}