Design of a Capacitorless Dynamic Random Access Memory Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual-Gate

In Man Kang

Design of a Capacitorless Dynamic Random Access Memory Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual-Gate

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4223
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
State	Published - 2021

Cite this

@article{c13da7b0b32f4f98852e1f89bf8cb526,

title = "Design of a Capacitorless Dynamic Random Access Memory Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual-Gate",

author = "Kang, {In Man}",

year = "2021",

language = "English",

volume = "21",

pages = "4223",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}