@inproceedings{7a826519d8584ed39ba154ddb8389ca4,
title = "Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems",
abstract = "A Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems has been design and analyzed. Based on our previous work, which investigate Si-based arch-shaped GAA TFET, a Si/Ge heterojunction structure is adopted for engineering the tunneling bandgap. The epitaxially grown channel thickness (tepi) and source height under the gate region (Hsource) are selected as simulation variables. By this variables, we can optimize on-state current (Ion) with subthreshold swing (S) characteristics which are affected by tunneling regions. The designed Si/Ge-based heterojunction arch-shaped GAA TFET demonstrate Ion of 14.6 A/mm, S of 28.5 mV/dec, and threshold voltage (Vt) of 0.12 V.",
keywords = "arch-shaped, gate-all-around, low-power, mobile communication systems, Silicon/Germanium heterojunction, TFET, wearable devices",
author = "Seo, {Jae Hwa} and Yoon, {Young Jun} and Kwon, {Ra Hee} and Jang, {Young In} and Kang, {In Man}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 30th International Conference on Information Networking, ICOIN 2016 ; Conference date: 13-01-2016 Through 15-01-2016",
year = "2016",
month = mar,
day = "7",
doi = "10.1109/ICOIN.2016.7427155",
language = "English",
series = "International Conference on Information Networking",
publisher = "IEEE Computer Society",
pages = "442--444",
booktitle = "30th International Conference on Information Networking, ICOIN 2016",
address = "United States",
}