TY - JOUR
T1 - Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
AU - Cho, Seongjae
AU - Kang, In Man
PY - 2012/5
Y1 - 2012/5
N2 - Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I on), off-current (I off), current ratio (I on/I off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f T) and maximum oscillation frequency (f max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I on of 35 μA/μm were obtained. For this device, f T and f max were 80 GHz and 800 GHz, respectively.
AB - Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I on), off-current (I off), current ratio (I on/I off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f T) and maximum oscillation frequency (f max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I on of 35 μA/μm were obtained. For this device, f T and f max were 80 GHz and 800 GHz, respectively.
KW - Design optimization
KW - PNPN multi-junction
KW - Radio frequency (RF)
KW - Silicon nanowire (SNW)
KW - Tunneling field-effect transistor (TFET)
UR - http://www.scopus.com/inward/record.url?scp=84857458557&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2011.10.003
DO - 10.1016/j.cap.2011.10.003
M3 - Article
AN - SCOPUS:84857458557
SN - 1567-1739
VL - 12
SP - 673
EP - 677
JO - Current Applied Physics
JF - Current Applied Physics
IS - 3
ER -