Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

J. W. Dong; A. Osinsky; B. Hertog; A. M. Dabiran; P. P. Chow; Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1007/s11664-005-0121-6

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, P. P. Chow, Y. W. Heo, D. P. Norton, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, Mg_xZn_1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the Mg_xZn_1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

Original language	English
Pages (from-to)	416-423
Number of pages	8
Journal	Journal of Electronic Materials
Volume	34
Issue number	4
DOIs	https://doi.org/10.1007/s11664-005-0121-6
State	Published - Apr 2005

Keywords

Light emitting diodes
MgZnO
UV emitters
ZnO

Access to Document

10.1007/s11664-005-0121-6

Cite this

@article{7ef026644f9543aca37e3066a30704c1,

title = "Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications",

abstract = "We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.",

keywords = "Light emitting diodes, MgZnO, UV emitters, ZnO",

author = "Dong, {J. W.} and A. Osinsky and B. Hertog and Dabiran, {A. M.} and Chow, {P. P.} and Heo, {Y. W.} and Norton, {D. P.} and Pearton, {S. J.}",

year = "2005",

month = apr,

doi = "10.1007/s11664-005-0121-6",

language = "English",

volume = "34",

pages = "416--423",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

AU - Dong, J. W.

AU - Osinsky, A.

AU - Hertog, B.

AU - Dabiran, A. M.

AU - Chow, P. P.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2005/4

Y1 - 2005/4

N2 - We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

AB - We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

KW - Light emitting diodes

KW - MgZnO

KW - UV emitters

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=18144405369&partnerID=8YFLogxK

U2 - 10.1007/s11664-005-0121-6

DO - 10.1007/s11664-005-0121-6

M3 - Article

AN - SCOPUS:18144405369

SN - 0361-5235

VL - 34

SP - 416

EP - 423

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this