Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

J. W. Dong; A. Osinsky; B. Hertog; A. M. Dabiran; P. P. Chow; Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1007/s11664-005-0121-6

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

J. W. Dong
, A. Osinsky
, B. Hertog
, A. M. Dabiran
, P. P. Chow
, Y. W. Heo
, D. P. Norton
, S. J. Pearton

SVT Associates, Inc.
University of Florida

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, Mg_xZn_1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the Mg_xZn_1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

Original language	English
Pages (from-to)	416-423
Number of pages	8
Journal	Journal of Electronic Materials
Volume	34
Issue number	4
DOIs	https://doi.org/10.1007/s11664-005-0121-6
State	Published - Apr 2005

Keywords

Light emitting diodes
MgZnO
UV emitters
ZnO

Access to Document

10.1007/s11664-005-0121-6

Cite this

@article{7ef026644f9543aca37e3066a30704c1,

title = "Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications",

abstract = "We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.",

keywords = "Light emitting diodes, MgZnO, UV emitters, ZnO",

author = "Dong, \{J. W.\} and A. Osinsky and B. Hertog and Dabiran, \{A. M.\} and Chow, \{P. P.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\}",

year = "2005",

month = apr,

doi = "10.1007/s11664-005-0121-6",

language = "English",

volume = "34",

pages = "416--423",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

AU - Dong, J. W.

AU - Osinsky, A.

AU - Hertog, B.

AU - Dabiran, A. M.

AU - Chow, P. P.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2005/4

Y1 - 2005/4

N2 - We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

AB - We report on the fabrication and characterization of an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnO/AlGaN/GaN semiconductor triple-heterostructure (THS). Radio-frequency (RF) plasma-assisted molecular-beam epitaxy (MBE) has been employed to grow individual epitaxial layers of ZnO, MgxZn1-xO, and the complete heterostructure on c-plane GaN/sapphire templates. Various growth strategies have been used to optimize the quality of the ZnO layers as well as to precisely control the composition of the MgxZn1-xO compound. Cross-sectional transmission electron microscopy (TEM) study shows the excellent crystalline quality of the pseudomorphically grown ZnO active region of the device. A strong electroluminescence (EL) emission associated with ZnO excitonic transition was observed up to 650 K. The results shown in this paper strongly suggest the viability of RF plasma-assisted MBE in the development of next-generation UV emitters using ZnO-based materials.

KW - Light emitting diodes

KW - MgZnO

KW - UV emitters

KW - ZnO

UR - https://www.scopus.com/pages/publications/18144405369

U2 - 10.1007/s11664-005-0121-6

DO - 10.1007/s11664-005-0121-6

M3 - Article

AN - SCOPUS:18144405369

SN - 0361-5235

VL - 34

SP - 416

EP - 423

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this