Development of photo-diodes for Pohang-Accelerator-Laboratory X-ray free-electron laser

S. C. Lee, J. M. Baek, S. M. Hwang, H. J. Hyun, J. Y. Kim, S. H. Kim, H. Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Pohang-Accelerator-Laboratory X-ray free-electron laser (PAL-XFEL) provides intense ultra-short X-ray pulses via a self-amplified spontaneous emission (SASE) process. Since fluctuations are induced by the intrinsic characteristics of the SASE process, we designed and fabricated photo-diodes (PDs) to be used in quadrant beam position and pop-in monitoring systems for measuring intensity and position, and beam size, respectively. Six 500μm-thick high-resistivity silicon wafers were used for different fabrication processes to vary the thicknesses of bias electrode and anti-reflective coating layers optimized for the quantum efficiency (QE) at typical wavelengths of 266 and 400 nm used for pump–probe experiments at the PAL-XFEL. In this paper, we present the electrical characteristics, QE, signal-to-noise ratio, energy resolution of the fabricated PDs, and compared them with those of commercial PD.

Keywords

  • Energy resolution
  • PIN photo-diode
  • Pohang-Accelerator-Laboratory X-ray free-electron laser
  • Quantum efficiency
  • Signal-to-noise ratio

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