Device characteristics of AlGaN/GaN MIS-HFET using Al2O 3-HfO2 laminated high-k dielectric

Ki Yeol Park; Hyun Ick Cho; Hyun Chul Choi; Young Ho Bae; Chun Soo Lee; Jong Lam Lee; Jung Hee Lee

doi:10.1143/JJAP.43.L1433

Device characteristics of AlGaN/GaN MIS-HFET using Al₂O ₃-HfO₂ laminated high-k dielectric

Ki Yeol Park, Hyun Ick Cho, Hyun Chul Choi, Young Ho Bae, Chun Soo Lee, Jong Lam Lee, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

This is the first report on an AlGaN/GaN metal-insulator-semiconductor- heterostructure field-effect transistors (MIS-HFET) with an Al₂O ₃-HfO₂ laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al₂O ₃-HfO₂ laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 μm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al ₂O₃-HfO₂ laminated dielectric effectively passivated the surface of the device.

Original language	English
Pages (from-to)	L1433-L1435
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.43.L1433
State	Published - 1 Nov 2004

Keywords

AlO -HfO laminated dielectric
AlGaN/GaN HFET
High-k dielectric
Insulator
MIS

Access to Document

10.1143/JJAP.43.L1433

Cite this

@article{c33d17222ede4a0aaaad7a70fe8f53c6,

title = "Device characteristics of AlGaN/GaN MIS-HFET using Al2O 3-HfO2 laminated high-k dielectric",

abstract = "This is the first report on an AlGaN/GaN metal-insulator-semiconductor- heterostructure field-effect transistors (MIS-HFET) with an Al2O 3-HfO2 laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al2O 3-HfO2 laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 μm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al 2O3-HfO2 laminated dielectric effectively passivated the surface of the device.",

keywords = "AlO -HfO laminated dielectric, AlGaN/GaN HFET, High-k dielectric, Insulator, MIS",

author = "Park, {Ki Yeol} and Cho, {Hyun Ick} and Choi, {Hyun Chul} and Bae, {Young Ho} and Lee, {Chun Soo} and Lee, {Jong Lam} and Lee, {Jung Hee}",

year = "2004",

month = nov,

day = "1",

doi = "10.1143/JJAP.43.L1433",

language = "English",

volume = "43",

pages = "L1433--L1435",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11 A",

}

TY - JOUR

T1 - Device characteristics of AlGaN/GaN MIS-HFET using Al2O 3-HfO2 laminated high-k dielectric

AU - Park, Ki Yeol

AU - Cho, Hyun Ick

AU - Choi, Hyun Chul

AU - Bae, Young Ho

AU - Lee, Chun Soo

AU - Lee, Jong Lam

AU - Lee, Jung Hee

PY - 2004/11/1

Y1 - 2004/11/1

N2 - This is the first report on an AlGaN/GaN metal-insulator-semiconductor- heterostructure field-effect transistors (MIS-HFET) with an Al2O 3-HfO2 laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al2O 3-HfO2 laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 μm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al 2O3-HfO2 laminated dielectric effectively passivated the surface of the device.

AB - This is the first report on an AlGaN/GaN metal-insulator-semiconductor- heterostructure field-effect transistors (MIS-HFET) with an Al2O 3-HfO2 laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al2O 3-HfO2 laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 μm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al 2O3-HfO2 laminated dielectric effectively passivated the surface of the device.

KW - AlO -HfO laminated dielectric

KW - AlGaN/GaN HFET

KW - High-k dielectric

KW - Insulator

KW - MIS

UR - http://www.scopus.com/inward/record.url?scp=11144270450&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.L1433

DO - 10.1143/JJAP.43.L1433

M3 - Article

AN - SCOPUS:11144270450

SN - 0021-4922

VL - 43

SP - L1433-L1435

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11 A

ER -

Device characteristics of AlGaN/GaN MIS-HFET using Al₂O ₃-HfO₂ laminated high-k dielectric

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this