Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Cheol Yeong Jang; Min Jung Park; Eun Ja Jung; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Cheol Yeong Jang, Min Jung Park, Eun Ja Jung, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k², temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k² was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

Original language	English
Pages (from-to)	S480-S482
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
State	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

GaN
Surface acoustic wave

Cite this

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title = "Device characteristics of radio frequency SAW filter fabricated on GaN thin film",

abstract = "SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.",

keywords = "GaN, Surface acoustic wave",

author = "Jang, {Cheol Yeong} and Park, {Min Jung} and Jung, {Eun Ja} and Choi, {Hyun Chul} and Lee, {Jung Hee} and Lee, {Yong Hyun}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S480--S482",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

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TY - JOUR

T1 - Device characteristics of radio frequency SAW filter fabricated on GaN thin film

AU - Jang, Cheol Yeong

AU - Park, Min Jung

AU - Jung, Eun Ja

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2003/2

Y1 - 2003/2

N2 - SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

AB - SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

KW - GaN

KW - Surface acoustic wave

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M3 - Conference article

AN - SCOPUS:0037307154

SN - 0374-4884

VL - 42

SP - S480-S482

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Abstract

Keywords

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