Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Cheol Yeong Jang; Min Jung Park; Eun Ja Jung; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Cheol Yeong Jang
, Min Jung Park
, Eun Ja Jung
, Hyun Chul Choi
, Jung Hee Lee
, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k², temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k² was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

Original language	English
Pages (from-to)	S480-S482
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
State	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

GaN
Surface acoustic wave

Cite this

@article{5ef23699a7af42b2a87f6f87f2910cbb,

title = "Device characteristics of radio frequency SAW filter fabricated on GaN thin film",

abstract = "SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 \% to 1.36 \%. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.",

keywords = "GaN, Surface acoustic wave",

author = "Jang, \{Cheol Yeong\} and Park, \{Min Jung\} and Jung, \{Eun Ja\} and Choi, \{Hyun Chul\} and Lee, \{Jung Hee\} and Lee, \{Yong Hyun\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S480--S482",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - Device characteristics of radio frequency SAW filter fabricated on GaN thin film

AU - Jang, Cheol Yeong

AU - Park, Min Jung

AU - Jung, Eun Ja

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2003/2

Y1 - 2003/2

N2 - SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

AB - SAW Characteristics of undoped GaN thin film such as velocity, electro-mechanical coupling coefficient k2, temperature coefficient of frequency (TCF), and propagation loss were investigated. GaN thin film was deposited on sapphire substrate by MOCVD. SAW velocity of 5352 m/s and TCF of -61.8 ppm/°C were measured at kh value of 0.3 and a temperature range -30 - 80 °C. k2 was varied from 4.01 % to 1.36 %. The fabricated SAW filter exhibited good device performance with insertion loss of -36 dB and side lobe attenuation of 20 dB at the wavelength of 40 μm (λ/4 = 10 μm). The center frequency was 133.8 MHz.

KW - GaN

KW - Surface acoustic wave

UR - https://www.scopus.com/pages/publications/0037307154

M3 - Conference article

AN - SCOPUS:0037307154

SN - 0374-4884

VL - 42

SP - S480-S482

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Device characteristics of radio frequency SAW filter fabricated on GaN thin film

Abstract

Keywords

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