@inproceedings{ab7196495c8142f3ab5fff6637c8bec1,
title = "Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array",
abstract = "We explore design space considerations of an ovonic threshold switch (OTS) for successful read operations in cross-point magnetic random access memory (MRAM) arrays through array-level SPICE simulations. We reveal that an appropriate threshold voltage (Vth) of the OTS considering the voltage matching with the MRAM should be used to achieve a reasonable read voltage margin. In addition, a low off-current of the OTS is required to prevent sneak-path currents, which ensures a sufficient read-out current ratio in large arrays. Based on a survey of recent literature on the OTS, we discuss how the desirable parameters can be achieved from material engineering perspective.",
keywords = "and cross-point array, MRAM, OTS",
author = "Jiyong Woo and Shimeng Yu",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731137",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "148--150",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "United States",
}