Device physics and performance potential of III-V field-effect transistors

Yang Liu; Himadri S. Pal; Mark S. Lundstrom; Dae Hyun Kim; Jesús A.Del Alamo; Dimitri A. Antoniadis

doi:10.1007/978-1-4419-1547-4_3

Device physics and performance potential of III-V field-effect transistors

Yang Liu, Himadri S. Pal, Mark S. Lundstrom, Dae Hyun Kim, Jesús A.Del Alamo, Dimitri A. Antoniadis

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

6 Scopus citations

Abstract

The device physics and technology issues for III-V transistors are examined from a simulation perspective. To examine device physics, an InGaAs HEMT structure similar to those being explored experimentally is analyzed. The physics of this device is explored using detailed, quantum mechanical simulations based on the non-equilibrium Green's function formalism. In this chapter, we: (1) elucidate the essential physics of III-V HEMTs, (2) identify key technology challenges that need to be addressed, and (3) estimate the expected performance advantage for III-V transistors.

Original language	English
Title of host publication	Fundamentals of III-V Semiconductor MOSFETs
Publisher	Springer US
Pages	31-49
Number of pages	19
ISBN (Print)	9781441915467
DOIs	https://doi.org/10.1007/978-1-4419-1547-4_3
State	Published - 2010

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10.1007/978-1-4419-1547-4_3

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AU - Alamo, Jesús A.Del

AU - Antoniadis, Dimitri A.

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AB - The device physics and technology issues for III-V transistors are examined from a simulation perspective. To examine device physics, an InGaAs HEMT structure similar to those being explored experimentally is analyzed. The physics of this device is explored using detailed, quantum mechanical simulations based on the non-equilibrium Green's function formalism. In this chapter, we: (1) elucidate the essential physics of III-V HEMTs, (2) identify key technology challenges that need to be addressed, and (3) estimate the expected performance advantage for III-V transistors.

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BT - Fundamentals of III-V Semiconductor MOSFETs

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ER -

Device physics and performance potential of III-V field-effect transistors

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