Dichromatic color tuning with InGaN-based light-emitting diodes

Natalie N. Fellows; Hitoshi Sato; You Da Lin; Roy B. Chung; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.2990761

Dichromatic color tuning with InGaN-based light-emitting diodes

Natalie N. Fellows, Hitoshi Sato, You Da Lin, Roy B. Chung, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Color tuning GaN based light-emitting diodes (LEDs) both electrically and optically was investigated. Color mixing of two LED dies, one nonpolar (λ_p =467 nm) and one semipolar (λ_p =574 nm), produced white light. Electrically, the correct current was supplied to each die in order to change its correlated color temperature and Commission Internationale de l'Eclairage (CIE) chromaticity coordinates from 3287 K and (0.425, 0.413) to 7242 K and (0.303, 0.315). The optical polarization anisotropy inherent in nonpolar and semipolar wurtzite GaN allowed color tuning optically with the use of a polarizer. Several regions of the CIE diagram were explored using this method and are discussed.

Original language	English
Article number	121112
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2990761
State	Published - 2008

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title = "Dichromatic color tuning with InGaN-based light-emitting diodes",

abstract = "Color tuning GaN based light-emitting diodes (LEDs) both electrically and optically was investigated. Color mixing of two LED dies, one nonpolar (λp =467 nm) and one semipolar (λp =574 nm), produced white light. Electrically, the correct current was supplied to each die in order to change its correlated color temperature and Commission Internationale de l'Eclairage (CIE) chromaticity coordinates from 3287 K and (0.425, 0.413) to 7242 K and (0.303, 0.315). The optical polarization anisotropy inherent in nonpolar and semipolar wurtzite GaN allowed color tuning optically with the use of a polarizer. Several regions of the CIE diagram were explored using this method and are discussed.",

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AU - Fellows, Natalie N.

AU - Sato, Hitoshi

AU - Lin, You Da

AU - Chung, Roy B.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

PY - 2008

Y1 - 2008

N2 - Color tuning GaN based light-emitting diodes (LEDs) both electrically and optically was investigated. Color mixing of two LED dies, one nonpolar (λp =467 nm) and one semipolar (λp =574 nm), produced white light. Electrically, the correct current was supplied to each die in order to change its correlated color temperature and Commission Internationale de l'Eclairage (CIE) chromaticity coordinates from 3287 K and (0.425, 0.413) to 7242 K and (0.303, 0.315). The optical polarization anisotropy inherent in nonpolar and semipolar wurtzite GaN allowed color tuning optically with the use of a polarizer. Several regions of the CIE diagram were explored using this method and are discussed.

AB - Color tuning GaN based light-emitting diodes (LEDs) both electrically and optically was investigated. Color mixing of two LED dies, one nonpolar (λp =467 nm) and one semipolar (λp =574 nm), produced white light. Electrically, the correct current was supplied to each die in order to change its correlated color temperature and Commission Internationale de l'Eclairage (CIE) chromaticity coordinates from 3287 K and (0.425, 0.413) to 7242 K and (0.303, 0.315). The optical polarization anisotropy inherent in nonpolar and semipolar wurtzite GaN allowed color tuning optically with the use of a polarizer. Several regions of the CIE diagram were explored using this method and are discussed.

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Dichromatic color tuning with InGaN-based light-emitting diodes

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