Dielectrically stabilized electrowetting on AF1600/Si3N 4/TiO2 dielectric composite film

June Kyoo Lee; Kyung Woo Park; Hak Rin Kim; Seong Ho Kong

doi:10.1016/j.snb.2011.09.074

Dielectrically stabilized electrowetting on AF1600/Si₃N ₄/TiO₂ dielectric composite film

June Kyoo Lee, Kyung Woo Park, Hak Rin Kim, Seong Ho Kong

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

In this paper, we propose a dielectrically stabilized and reversible electrowetting-on-dielectric (EWOD) platform based on a multi-layered insulator composed of amorphous fluoropolymer (AF1600), silicon nitride (Si ₃N₄), and titanium dioxide (TiO₂). Although TiO₂ can reduce the electrowetting voltage owing to its high relative permittivity, κ, an EWOD platform composed of only TiO₂ is vulnerable to current leakage. The proposed AF1600/Si₃N ₄/TiO₂ (20 nm/20 nm/20 nm) EWOD platform exhibited enhanced dielectric strength as well as a low contact angle hysteresis within 2° of the droplet. Because a Si₃N₄ film has excellent dielectric strength as compared to AF1600 and TiO₂ films, it can safeguard the EWOD platform from both current leakage and dielectric breakdown. The electrowetting capability of the AF1600/Si₃N₄/TiO ₂ EWOD platform was improved by means of a thin fluoropolymer film with a thickness of less than 20 nm.

Original language	English
Pages (from-to)	1593-1598
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	160
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2011.09.074
State	Published - 15 Dec 2011

Keywords

Amorphous fluoropolymer
Contact angle
Electrowetting-on-dielectric (EWOD)
Silicon nitride
Titanium dioxide

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abstract = "In this paper, we propose a dielectrically stabilized and reversible electrowetting-on-dielectric (EWOD) platform based on a multi-layered insulator composed of amorphous fluoropolymer (AF1600), silicon nitride (Si 3N4), and titanium dioxide (TiO2). Although TiO2 can reduce the electrowetting voltage owing to its high relative permittivity, κ, an EWOD platform composed of only TiO2 is vulnerable to current leakage. The proposed AF1600/Si3N 4/TiO2 (20 nm/20 nm/20 nm) EWOD platform exhibited enhanced dielectric strength as well as a low contact angle hysteresis within 2° of the droplet. Because a Si3N4 film has excellent dielectric strength as compared to AF1600 and TiO2 films, it can safeguard the EWOD platform from both current leakage and dielectric breakdown. The electrowetting capability of the AF1600/Si3N4/TiO 2 EWOD platform was improved by means of a thin fluoropolymer film with a thickness of less than 20 nm.",

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AU - Park, Kyung Woo

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AU - Kong, Seong Ho

PY - 2011/12/15

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N2 - In this paper, we propose a dielectrically stabilized and reversible electrowetting-on-dielectric (EWOD) platform based on a multi-layered insulator composed of amorphous fluoropolymer (AF1600), silicon nitride (Si 3N4), and titanium dioxide (TiO2). Although TiO2 can reduce the electrowetting voltage owing to its high relative permittivity, κ, an EWOD platform composed of only TiO2 is vulnerable to current leakage. The proposed AF1600/Si3N 4/TiO2 (20 nm/20 nm/20 nm) EWOD platform exhibited enhanced dielectric strength as well as a low contact angle hysteresis within 2° of the droplet. Because a Si3N4 film has excellent dielectric strength as compared to AF1600 and TiO2 films, it can safeguard the EWOD platform from both current leakage and dielectric breakdown. The electrowetting capability of the AF1600/Si3N4/TiO 2 EWOD platform was improved by means of a thin fluoropolymer film with a thickness of less than 20 nm.

AB - In this paper, we propose a dielectrically stabilized and reversible electrowetting-on-dielectric (EWOD) platform based on a multi-layered insulator composed of amorphous fluoropolymer (AF1600), silicon nitride (Si 3N4), and titanium dioxide (TiO2). Although TiO2 can reduce the electrowetting voltage owing to its high relative permittivity, κ, an EWOD platform composed of only TiO2 is vulnerable to current leakage. The proposed AF1600/Si3N 4/TiO2 (20 nm/20 nm/20 nm) EWOD platform exhibited enhanced dielectric strength as well as a low contact angle hysteresis within 2° of the droplet. Because a Si3N4 film has excellent dielectric strength as compared to AF1600 and TiO2 films, it can safeguard the EWOD platform from both current leakage and dielectric breakdown. The electrowetting capability of the AF1600/Si3N4/TiO 2 EWOD platform was improved by means of a thin fluoropolymer film with a thickness of less than 20 nm.

KW - Amorphous fluoropolymer

KW - Contact angle

KW - Electrowetting-on-dielectric (EWOD)

KW - Silicon nitride

KW - Titanium dioxide

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Dielectrically stabilized electrowetting on AF1600/Si₃N ₄/TiO₂ dielectric composite film

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