Different shape of GaAs quantum structures under various growth conditions

Jaesu Kim; Byounggu Jo; Kwang Jae Lee; Dongwoo Park; Cheul Ro Lee; Jin Soo Kim; Mun Seok Jeong; Clare Chisu Byeon; Hoonsoo Kang; Jong Su Kim; Jin Dong Song; Won Jun Choi; Jung Il Lee; Sang Jun Lee; Sam Kyu Noh; Dae Kon Oh; Jae Young Leem

doi:10.1016/j.tsf.2010.03.151

Different shape of GaAs quantum structures under various growth conditions

Jaesu Kim, Byounggu Jo, Kwang Jae Lee, Dongwoo Park, Cheul Ro Lee, Jin Soo Kim, Mun Seok Jeong, Clare Chisu Byeon, Hoonsoo Kang, Jong Su Kim, Jin Dong Song, Won Jun Choi, Jung Il Lee, Sang Jun Lee, Sam Kyu Noh, Dae Kon Oh, Jae Young Leem

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10 ^{- 5} to 3 × 10^{- 5} Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)-c(4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered.

Original language	English
Pages (from-to)	6500-6504
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.03.151
State	Published - 1 Sep 2010

Keywords

Growth conditions
Quantum dot
Quantum ring

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10.1016/j.tsf.2010.03.151

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title = "Different shape of GaAs quantum structures under various growth conditions",

abstract = "We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10 - 5 to 3 × 10- 5 Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)-c(4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered.",

keywords = "Growth conditions, Quantum dot, Quantum ring",

author = "Jaesu Kim and Byounggu Jo and Lee, {Kwang Jae} and Dongwoo Park and Lee, {Cheul Ro} and Kim, {Jin Soo} and Jeong, {Mun Seok} and Byeon, {Clare Chisu} and Hoonsoo Kang and Kim, {Jong Su} and Song, {Jin Dong} and Choi, {Won Jun} and Lee, {Jung Il} and Lee, {Sang Jun} and Noh, {Sam Kyu} and Oh, {Dae Kon} and Leem, {Jae Young}",

year = "2010",

month = sep,

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doi = "10.1016/j.tsf.2010.03.151",

language = "English",

volume = "518",

pages = "6500--6504",

journal = "Thin Solid Films",

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T1 - Different shape of GaAs quantum structures under various growth conditions

AU - Kim, Jaesu

AU - Jo, Byounggu

AU - Lee, Kwang Jae

AU - Park, Dongwoo

AU - Lee, Cheul Ro

AU - Kim, Jin Soo

AU - Jeong, Mun Seok

AU - Byeon, Clare Chisu

AU - Kang, Hoonsoo

AU - Kim, Jong Su

AU - Song, Jin Dong

AU - Choi, Won Jun

AU - Lee, Jung Il

AU - Lee, Sang Jun

AU - Noh, Sam Kyu

AU - Oh, Dae Kon

AU - Leem, Jae Young

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10 - 5 to 3 × 10- 5 Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)-c(4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered.

AB - We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10 - 5 to 3 × 10- 5 Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)-c(4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered.

KW - Growth conditions

KW - Quantum dot

KW - Quantum ring

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DO - 10.1016/j.tsf.2010.03.151

M3 - Article

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SN - 0040-6090

VL - 518

SP - 6500

EP - 6504

JO - Thin Solid Films

JF - Thin Solid Films

IS - 22

ER -

Different shape of GaAs quantum structures under various growth conditions

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