@inproceedings{7aba0d326ab646e8a303f35ee0bb0b46,
title = "Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices",
abstract = "We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.",
author = "Jinhee Ham and Wooyoung Shim and Kim, \{Do Hyun\} and Seunghyun Lee and Jongwook Roh and Sohn, \{Sung Woo\} and Oh, \{Kyu Hwan\} and Voorhees, \{Peter W.\} and Wooyoung Lee",
year = "2010",
doi = "10.1109/INEC.2010.5424556",
language = "English",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "105--106",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",
}