Abstract
To explain the address discharge fail at a high temperature, the wall charge leakage phenomenon during address-period is investigated relative to the number of applied address and sustain pulses under variable ambient temperature based on the Vt closed-curve analysis. The wall charge leakages are increased with an increase in the number of the applied address and sustain pulse, and this tendency are intensified as the ambient temperature increased. It is also observed that the wall charge leakage during address period depends on the level of scan high voltage. Base on the experimental observation, the driving waveform with multi scan high level is proposed to produce the stable address discharge under variable ambient temperature.
Original language | English |
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Pages (from-to) | 1729-1732 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 39 |
Issue number | 3 |
DOIs | |
State | Published - 2008 |
Event | 2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008 |