Double polymer layer for a high dielectric gate insulator in 6,13-bis(triisopropylsilylethynyl)-pentacene Field-effect transistor

Won Ho Kim, Jin Hyuk Bae, Min Hoi Kim, Chang Min Keum, Sin Doo Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the reduction of the operating voltage using a high dielectric polymeric insulator in the 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistor (FET). The paraelectric polyvinyl phenol) was prepared as a screening layer on a high dielectric ferroelectric poly(vinylidene fluoride-trifluoroethylene) insulator to eliminate the hysteresis in the FET. It is found that the double layered insulator in our TIPS-pentacene FET reduces the operating voltage by a factor of about three.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages488-489
Number of pages2
StatePublished - 2010
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • High dielectric polymer
  • Low operating voltage
  • TIPS-pentacene FET

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