Abstract
We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.
| Original language | English |
|---|---|
| Title of host publication | 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 30-33 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479965519 |
| DOIs | |
| State | Published - 7 Jan 2016 |
| Event | 14th International Conference on QiR (Quality in Research), QiR 2015 - Lombok, Indonesia Duration: 10 Aug 2015 → 13 Aug 2015 |
Publication series
| Name | 14th International Conference on QiR (Quality in Research), QiR 2015 - In conjunction with 4th Asian Symposium on Material Processing, ASMP 2015 and International Conference in Saving Energy in Refrigeration and Air Conditioning, ICSERA 2015 |
|---|
Conference
| Conference | 14th International Conference on QiR (Quality in Research), QiR 2015 |
|---|---|
| Country/Territory | Indonesia |
| City | Lombok |
| Period | 10/08/15 → 13/08/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Al2O3
- AlGaN
- GaN
- Graphene
- MISIM (Metal-insulator-semiconductor-insulator-metal)
- Ni
- Schottky
- UV sensor
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