@inproceedings{fe357b6b649147ffaedd6e18e6d8fadc,
title = "Drain current modeling of gallium nitride Schottky barrier MOSFETs",
abstract = "The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and Schottky barrier tunneling from the source to the channel. The drain current is dependent on the Schottky barrier height, but is barely affected by the doping concentration. For the depletion type gallium nitride SB MOSFET with both an ITO source and drain electrodes, the threshold voltage is calculated to be 3.5 V, which is similar to the measured value of 3.75 V, and the calculated drain current is 1.2 times higher than the measured value.",
keywords = "Drain current, GaN, SB-MOSFET",
author = "Seol, {Jeong Hoon} and Hahm, {Sung Ho}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 15th International Conference on Quality in Research: International Symposium on Electrical and Computer Engineering, QiR 2017 ; Conference date: 24-07-2017 Through 27-07-2017",
year = "2017",
month = dec,
day = "5",
doi = "10.1109/QIR.2017.8168536",
language = "English",
series = "QiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "497--500",
booktitle = "QiR 2017 - 2017 15th International Conference on Quality in Research (QiR)",
address = "United States",
}