Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI                         3                          plasma chemistries

W. T. Lim; L. Stafford; Ju Il Song; Jae Soung Park; Y. W. Heo; Joon Hyung Lee; Jeong Joo Kim; S. J. Pearton

doi:10.1016/j.apsusc.2006.07.094

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI ₃ plasma chemistries

W. T. Lim, L. Stafford, Ju Il Song, Jae Soung Park, Y. W. Heo, Joon Hyung Lee, Jeong Joo Kim, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI ₃ . In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI ₃ -based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. The etched surface morphologies are smooth, independent of the discharge chemistry. From Auger electron spectroscopy, it is found that the near-surface stoichiometry is unchanged within experimental error, indicating a low degree of plasma-induced damage.

Original language	English
Pages (from-to)	3773-3778
Number of pages	6
Journal	Applied Surface Science
Volume	253
Issue number	8
DOIs	https://doi.org/10.1016/j.apsusc.2006.07.094
State	Published - 15 Feb 2007

Keywords

Dry etching
Indium-zinc-oxide
ZnO

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10.1016/j.apsusc.2006.07.094

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Lim, W. T., Stafford, L., Song, J. I., Park, J. S., Heo, Y. W., Lee, J. H., Kim, J. J., & Pearton, S. J. (2007). Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI ₃ plasma chemistries Applied Surface Science, 253(8), 3773-3778. https://doi.org/10.1016/j.apsusc.2006.07.094

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title = " Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI 3 plasma chemistries ",

abstract = " The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI 3 . In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI 3 -based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. The etched surface morphologies are smooth, independent of the discharge chemistry. From Auger electron spectroscopy, it is found that the near-surface stoichiometry is unchanged within experimental error, indicating a low degree of plasma-induced damage.",

keywords = "Dry etching, Indium-zinc-oxide, ZnO",

author = "Lim, {W. T.} and L. Stafford and Song, {Ju Il} and Park, {Jae Soung} and Heo, {Y. W.} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Pearton, {S. J.}",

year = "2007",

month = feb,

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doi = "10.1016/j.apsusc.2006.07.094",

language = "English",

volume = "253",

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Lim, WT, Stafford, L, Song, JI, Park, JS, Heo, YW , Lee, JH, Kim, JJ & Pearton, SJ 2007, ' Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI ₃ plasma chemistries ', Applied Surface Science, vol. 253, no. 8, pp. 3773-3778. https://doi.org/10.1016/j.apsusc.2006.07.094

TY - JOUR

T1 - Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI 3 plasma chemistries

AU - Lim, W. T.

AU - Stafford, L.

AU - Song, Ju Il

AU - Park, Jae Soung

AU - Heo, Y. W.

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Pearton, S. J.

PY - 2007/2/15

Y1 - 2007/2/15

N2 - The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI 3 . In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI 3 -based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. The etched surface morphologies are smooth, independent of the discharge chemistry. From Auger electron spectroscopy, it is found that the near-surface stoichiometry is unchanged within experimental error, indicating a low degree of plasma-induced damage.

AB - The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI 3 . In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI 3 -based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. The etched surface morphologies are smooth, independent of the discharge chemistry. From Auger electron spectroscopy, it is found that the near-surface stoichiometry is unchanged within experimental error, indicating a low degree of plasma-induced damage.

KW - Dry etching

KW - Indium-zinc-oxide

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=33846602688&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.07.094

DO - 10.1016/j.apsusc.2006.07.094

M3 - Article

AN - SCOPUS:33846602688

SN - 0169-4332

VL - 253

SP - 3773

EP - 3778

JO - Applied Surface Science

JF - Applied Surface Science

IS - 8

ER -

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI ₃ plasma chemistries

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Keywords

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