Dual-band responsivity of AlGaN/GaN MSM UV photodiode

Young Jin Kwon; Chang Ju Lee; Do Kywn Kim; Sung Ho Hahm

doi:10.1109/EDSSC.2012.6482847

Dual-band responsivity of AlGaN/GaN MSM UV photodiode

Young Jin Kwon, Chang Ju Lee, Do Kywn Kim, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.

Original language	English
Title of host publication	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs	https://doi.org/10.1109/EDSSC.2012.6482847
State	Published - 2012
Event	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand Duration: 3 Dec 2012 → 5 Dec 2012

Publication series

Name	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Conference

Conference	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country/Territory	Thailand
City	Bangkok
Period	3/12/12 → 5/12/12

Keywords

AlGaN/GaN
dual-band UV sensing
MSM

Access to Document

10.1109/EDSSC.2012.6482847

Cite this

@inproceedings{c8d6b077ab2640928dd55541b1df7425,

title = "Dual-band responsivity of AlGaN/GaN MSM UV photodiode",

abstract = "We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.",

keywords = "AlGaN/GaN, dual-band UV sensing, MSM",

author = "Kwon, {Young Jin} and Lee, {Chang Ju} and Kim, {Do Kywn} and Hahm, {Sung Ho}",

year = "2012",

doi = "10.1109/EDSSC.2012.6482847",

language = "English",

isbn = "9781467356961",

series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",

}

Kwon, YJ, Lee, CJ, Kim, DK & Hahm, SH 2012, Dual-band responsivity of AlGaN/GaN MSM UV photodiode. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482847, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 3/12/12. https://doi.org/10.1109/EDSSC.2012.6482847

Dual-band responsivity of AlGaN/GaN MSM UV photodiode. / Kwon, Young Jin; Lee, Chang Ju; Kim, Do Kywn et al.
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482847 (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dual-band responsivity of AlGaN/GaN MSM UV photodiode

AU - Kwon, Young Jin

AU - Lee, Chang Ju

AU - Kim, Do Kywn

AU - Hahm, Sung Ho

PY - 2012

Y1 - 2012

N2 - We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.

AB - We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.

KW - AlGaN/GaN

KW - dual-band UV sensing

KW - MSM

UR - http://www.scopus.com/inward/record.url?scp=84875691948&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2012.6482847

DO - 10.1109/EDSSC.2012.6482847

M3 - Conference contribution

AN - SCOPUS:84875691948

SN - 9781467356961

T3 - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

T2 - 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012

Y2 - 3 December 2012 through 5 December 2012

ER -

Dual-band responsivity of AlGaN/GaN MSM UV photodiode

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this