E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

D. H. Kim; P. Hundal; A. Papavasiliou; P. Chen; C. King; J. Paniagua; M. Urteaga; B. Brar; Y. G. Kim; J. M. Kuo; J. Li; P. Pinsukanjana; Y. C. Kao

doi:10.1109/IEDM.2012.6479150

E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator

D. H. Kim, P. Hundal, A. Papavasiliou, P. Chen, C. King, J. Paniagua, M. Urteaga, B. Brar, Y. G. Kim, J. M. Kuo, J. Li, P. Pinsukanjana, Y. C. Kao

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al₂O₃/HfO₂. An L _g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits V_T = 0.17 V, R_ON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of g_m-max > 2 mS/μm at V _DS = 0.5 V in any III-V MOSFETs.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	32.2.1-32.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479150
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

Access to Document

10.1109/IEDM.2012.6479150

Cite this

Kim, D. H., Hundal, P., Papavasiliou, A., Chen, P., King, C., Paniagua, J., Urteaga, M., Brar, B., Kim, Y. G., Kuo, J. M., Li, J., Pinsukanjana, P., & Kao, Y. C. (2012). E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 32.2.1-32.2.4). Article 6479150 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479150

@inproceedings{f6fe7aba97ff45909315572c4f63cc0d,

title = "E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator",

abstract = "We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.",

author = "Kim, {D. H.} and P. Hundal and A. Papavasiliou and P. Chen and C. King and J. Paniagua and M. Urteaga and B. Brar and Kim, {Y. G.} and Kuo, {J. M.} and J. Li and P. Pinsukanjana and Kao, {Y. C.}",

year = "2012",

doi = "10.1109/IEDM.2012.6479150",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "32.2.1--32.2.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Kim, DH, Hundal, P, Papavasiliou, A, Chen, P, King, C, Paniagua, J, Urteaga, M, Brar, B, Kim, YG, Kuo, JM, Li, J, Pinsukanjana, P & Kao, YC 2012, E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479150, Technical Digest - International Electron Devices Meeting, IEDM, pp. 32.2.1-32.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479150

E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. / Kim, D. H.; Hundal, P.; Papavasiliou, A. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 32.2.1-32.2.4 6479150 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

AU - Kim, D. H.

AU - Hundal, P.

AU - Papavasiliou, A.

AU - Chen, P.

AU - King, C.

AU - Paniagua, J.

AU - Urteaga, M.

AU - Brar, B.

AU - Kim, Y. G.

AU - Kuo, J. M.

AU - Li, J.

AU - Pinsukanjana, P.

AU - Kao, Y. C.

PY - 2012

Y1 - 2012

N2 - We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.

AB - We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=84876100133&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6479150

DO - 10.1109/IEDM.2012.6479150

M3 - Conference contribution

AN - SCOPUS:84876100133

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 32.2.1-32.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -