E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

D. H. Kim; P. Hundal; A. Papavasiliou; P. Chen; C. King; J. Paniagua; M. Urteaga; B. Brar; Y. G. Kim; J. M. Kuo; J. Li; P. Pinsukanjana; Y. C. Kao

doi:10.1109/IEDM.2012.6479150

E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator

D. H. Kim
, P. Hundal
, A. Papavasiliou
, P. Chen
, C. King
, J. Paniagua
, M. Urteaga
, B. Brar
, Y. G. Kim
, J. M. Kuo
, J. Li
, P. Pinsukanjana
, Y. C. Kao

Teledyne Technologies
Ulsan National Institute of Science and Technology
IntelliEPI

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al₂O₃/HfO₂. An L _g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits V_T = 0.17 V, R_ON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of g_m-max > 2 mS/μm at V _DS = 0.5 V in any III-V MOSFETs.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	32.2.1-32.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479150
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

Access to Document

10.1109/IEDM.2012.6479150

Cite this

Kim, D. H., Hundal, P., Papavasiliou, A., Chen, P., King, C., Paniagua, J., Urteaga, M., Brar, B., Kim, Y. G., Kuo, J. M., Li, J., Pinsukanjana, P., & Kao, Y. C. (2012). E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 32.2.1-32.2.4). Article 6479150 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479150

@inproceedings{f6fe7aba97ff45909315572c4f63cc0d,

title = "E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator",

abstract = "We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.",

author = "Kim, \{D. H.\} and P. Hundal and A. Papavasiliou and P. Chen and C. King and J. Paniagua and M. Urteaga and B. Brar and Kim, \{Y. G.\} and Kuo, \{J. M.\} and J. Li and P. Pinsukanjana and Kao, \{Y. C.\}",

year = "2012",

doi = "10.1109/IEDM.2012.6479150",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "32.2.1--32.2.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Kim, DH, Hundal, P, Papavasiliou, A, Chen, P, King, C, Paniagua, J, Urteaga, M, Brar, B, Kim, YG, Kuo, JM, Li, J, Pinsukanjana, P & Kao, YC 2012, E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479150, Technical Digest - International Electron Devices Meeting, IEDM, pp. 32.2.1-32.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479150

E-mode planar L_g = 35 nm In_0.7Ga_0.3As MOSFETs with InP/Al₂O₃/HfO₂ (EOT = 0.8 nm) composite insulator. / Kim, D. H.; Hundal, P.; Papavasiliou, A. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 32.2.1-32.2.4 6479150 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

AU - Kim, D. H.

AU - Hundal, P.

AU - Papavasiliou, A.

AU - Chen, P.

AU - King, C.

AU - Paniagua, J.

AU - Urteaga, M.

AU - Brar, B.

AU - Kim, Y. G.

AU - Kuo, J. M.

AU - Li, J.

AU - Pinsukanjana, P.

AU - Kao, Y. C.

PY - 2012

Y1 - 2012

N2 - We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.

AB - We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An L g=35 nm InGaAs MOSFET with EOT = ∼ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm-max > 2 mS/μm at V DS = 0.5 V in any III-V MOSFETs.

UR - https://www.scopus.com/pages/publications/84876100133

U2 - 10.1109/IEDM.2012.6479150

DO - 10.1109/IEDM.2012.6479150

M3 - Conference contribution

AN - SCOPUS:84876100133

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 32.2.1-32.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -