Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Jae Hoon Lee; Sung Ho Hahm; Jung Hee Lee; Sung Bum Bae; Kyu Seok Lee; Yong Hoon Cho; Jong Lam Lee

doi:10.1063/1.1597423

Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Jae Hoon Lee, Sung Ho Hahm, Jung Hee Lee, Sung Bum Bae, Kyu Seok Lee, Yong Hoon Cho, Jong Lam Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

Original language	English
Pages (from-to)	917-919
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1597423
State	Published - 4 Aug 2003

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abstract = "The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.",

author = "Lee, {Jae Hoon} and Hahm, {Sung Ho} and Lee, {Jung Hee} and Bae, {Sung Bum} and Lee, {Kyu Seok} and Cho, {Yong Hoon} and Lee, {Jong Lam}",

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AU - Lee, Jae Hoon

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

AU - Bae, Sung Bum

AU - Lee, Kyu Seok

AU - Cho, Yong Hoon

AU - Lee, Jong Lam

PY - 2003/8/4

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N2 - The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

AB - The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

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JO - Applied Physics Letters

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Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Abstract

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