Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Jae Hoon Lee; Sung Ho Hahm; Jung Hee Lee; Sung Bum Bae; Kyu Seok Lee; Yong Hoon Cho; Jong Lam Lee

doi:10.1063/1.1597423

Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Jae Hoon Lee
, Sung Ho Hahm
, Jung Hee Lee
, Sung Bum Bae
, Kyu Seok Lee
, Yong Hoon Cho
, Jong Lam Lee

School of Electronics Engineering

Kyungpook National University
Electronics and Telecommunications Research Institute
Chungbuk National University
Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

Original language	English
Pages (from-to)	917-919
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1597423
State	Published - 4 Aug 2003

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10.1063/1.1597423

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title = "Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition",

abstract = "The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.",

author = "Lee, \{Jae Hoon\} and Hahm, \{Sung Ho\} and Lee, \{Jung Hee\} and Bae, \{Sung Bum\} and Lee, \{Kyu Seok\} and Cho, \{Yong Hoon\} and Lee, \{Jong Lam\}",

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T1 - Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

AU - Lee, Jae Hoon

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

AU - Bae, Sung Bum

AU - Lee, Kyu Seok

AU - Cho, Yong Hoon

AU - Lee, Jong Lam

PY - 2003/8/4

Y1 - 2003/8/4

N2 - The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

AB - The effect of Al doping in GaN films grown by metalorganic chemical vapor deposition was studied using photoluminescence (PL), time-resolved PL, Hall measurements, and reciprocal maps. An increase in the decay lifetime of the GaN band edge emission was observed with the Al-doped GaN. The incorporation of only a small amount of Al in GaN significantly reduces the point-defect-related electron scattering centre.

UR - https://www.scopus.com/pages/publications/0042879525

U2 - 10.1063/1.1597423

DO - 10.1063/1.1597423

M3 - Article

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SN - 0003-6951

VL - 83

SP - 917

EP - 919

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition

Abstract

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