Abstract
Al2O3-covered SiC/epoxy composites were prepared using a simple sol-gel method. The results of FE-SEM, TGA, and XPS indicated that the surfaces of the SiC particles had a large, dense, and homogenous distribution of Al2O3. It was found that the introduction of Al2O3 on the SiC surface improved the interfacial adhesion between the epoxy matrix and SiC particles; this resulted in an increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. In addition, Al2O3-covered SiC composites showed decreased electrical conductivity owing to decreased electron tunneling compared with raw SiC composites. Thus, the Al2O3-covered SiC composites prepared in the present work could prove to be desirable polymer composites to be used as thermal interface materials that are employed in the electronics industry.
Original language | English |
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Pages (from-to) | 17015-17021 |
Number of pages | 7 |
Journal | RSC Advances |
Volume | 4 |
Issue number | 33 |
DOIs | |
State | Published - 2014 |