Abstract
Al2O3-covered SiC/epoxy composites were prepared using a simple sol-gel method. The results of FE-SEM, TGA, and XPS indicated that the surfaces of the SiC particles had a large, dense, and homogenous distribution of Al2O3. It was found that the introduction of Al2O3 on the SiC surface improved the interfacial adhesion between the epoxy matrix and SiC particles; this resulted in an increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. In addition, Al2O3-covered SiC composites showed decreased electrical conductivity owing to decreased electron tunneling compared with raw SiC composites. Thus, the Al2O3-covered SiC composites prepared in the present work could prove to be desirable polymer composites to be used as thermal interface materials that are employed in the electronics industry.
| Original language | English |
|---|---|
| Pages (from-to) | 17015-17021 |
| Number of pages | 7 |
| Journal | RSC Advances |
| Volume | 4 |
| Issue number | 33 |
| DOIs | |
| State | Published - 2014 |