Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process

Jong Chil Do; Ho Beom Kim; Cheol Hyoun Ahn; Hyung Koun Cho; Ho Seong Lee

doi:10.1557/jmr.2012.138

Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process

Jong Chil Do, Ho Beom Kim, Cheol Hyoun Ahn, Hyung Koun Cho, Ho Seong Lee

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 10 ⁶. The field-effect mobility (μ _FE) of 4.1 cm ²/Vs and subthreshold swing of 1.2 V/decade were achieved.

Original language	English
Pages (from-to)	2293-2298
Number of pages	6
Journal	Journal of Materials Research
Volume	27
Issue number	17
DOIs	https://doi.org/10.1557/jmr.2012.138
State	Published - 14 Sep 2012

Keywords

electrical properties
oxide
sol-gel

Access to Document

10.1557/jmr.2012.138

Cite this

@article{0ff6f8c997d147128544d4a0cff6dfc5,

title = "Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process",

abstract = "Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 10 6. The field-effect mobility (μ FE) of 4.1 cm 2/Vs and subthreshold swing of 1.2 V/decade were achieved.",

keywords = "electrical properties, oxide, sol-gel",

author = "Do, {Jong Chil} and Kim, {Ho Beom} and Ahn, {Cheol Hyoun} and Cho, {Hyung Koun} and Lee, {Ho Seong}",

year = "2012",

month = sep,

day = "14",

doi = "10.1557/jmr.2012.138",

language = "English",

volume = "27",

pages = "2293--2298",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "17",

}

TY - JOUR

T1 - Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process

AU - Do, Jong Chil

AU - Kim, Ho Beom

AU - Ahn, Cheol Hyoun

AU - Cho, Hyung Koun

AU - Lee, Ho Seong

PY - 2012/9/14

Y1 - 2012/9/14

N2 - Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 10 6. The field-effect mobility (μ FE) of 4.1 cm 2/Vs and subthreshold swing of 1.2 V/decade were achieved.

AB - Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600 °C was as large as 4.2 × 10 6. The field-effect mobility (μ FE) of 4.1 cm 2/Vs and subthreshold swing of 1.2 V/decade were achieved.

KW - electrical properties

KW - oxide

KW - sol-gel

UR - http://www.scopus.com/inward/record.url?scp=84865451302&partnerID=8YFLogxK

U2 - 10.1557/jmr.2012.138

DO - 10.1557/jmr.2012.138

M3 - Article

AN - SCOPUS:84865451302

SN - 0884-2914

VL - 27

SP - 2293

EP - 2298

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 17

ER -

Effect of annealing temperature on the electrical characteristics of Ti-Zn-Sn-O thin-film transistors fabricated via a solution process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this