Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

Young Jae Kim; Young Jun Yoon; Jae Hwa Seo; Sung Min Lee; Seongjae Cho; Jung Hee Lee; In Man Kang

doi:10.1088/0268-1242/30/1/015006

Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

Young Jae Kim, Young Jun Yoon, Jae Hwa Seo, Sung Min Lee, Seongjae Cho, Jung Hee Lee, In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, an InGaAs-based tunneling field-effect transistor (TFET) with gate-all-around channel is designed and its performances are investigated by rigorous device simulations. The simulation results show that the schemed TFET device shows improved dc characteristics including smaller subthreshold swing (S) and higher on-state current (Ion) in comparison to conventional TFETs. Device performances have been closely investigated by changing Ga fraction (x) in the In₁-xGaxAs source-side channel region. Further, the dependences of radio-frequency (RF) performances including cut-off frequency (FT), gate-source capacitance (Cgs) with the schemed TFETs are examined as the source-channel length (Lsc) is scaled at different Ga fractions. The InGaAs TFET device shows superior dc and RF performances with optimized Ga fraction and geometric dimensions.

Original language	English
Article number	015006
Journal	Semiconductor Science and Technology
Volume	30
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/30/1/015006
State	Published - 1 Jan 2015

Keywords

Ga fraction
InGaAs
source-side channel
tunneling field-effect transistor (TFET)

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10.1088/0268-1242/30/1/015006

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title = "Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor",

abstract = "In this paper, an InGaAs-based tunneling field-effect transistor (TFET) with gate-all-around channel is designed and its performances are investigated by rigorous device simulations. The simulation results show that the schemed TFET device shows improved dc characteristics including smaller subthreshold swing (S) and higher on-state current (Ion) in comparison to conventional TFETs. Device performances have been closely investigated by changing Ga fraction (x) in the In1-xGaxAs source-side channel region. Further, the dependences of radio-frequency (RF) performances including cut-off frequency (FT), gate-source capacitance (Cgs) with the schemed TFETs are examined as the source-channel length (Lsc) is scaled at different Ga fractions. The InGaAs TFET device shows superior dc and RF performances with optimized Ga fraction and geometric dimensions.",

keywords = "Ga fraction, InGaAs, source-side channel, tunneling field-effect transistor (TFET)",

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T1 - Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

AU - Kim, Young Jae

AU - Yoon, Young Jun

AU - Seo, Jae Hwa

AU - Lee, Sung Min

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In this paper, an InGaAs-based tunneling field-effect transistor (TFET) with gate-all-around channel is designed and its performances are investigated by rigorous device simulations. The simulation results show that the schemed TFET device shows improved dc characteristics including smaller subthreshold swing (S) and higher on-state current (Ion) in comparison to conventional TFETs. Device performances have been closely investigated by changing Ga fraction (x) in the In1-xGaxAs source-side channel region. Further, the dependences of radio-frequency (RF) performances including cut-off frequency (FT), gate-source capacitance (Cgs) with the schemed TFETs are examined as the source-channel length (Lsc) is scaled at different Ga fractions. The InGaAs TFET device shows superior dc and RF performances with optimized Ga fraction and geometric dimensions.

AB - In this paper, an InGaAs-based tunneling field-effect transistor (TFET) with gate-all-around channel is designed and its performances are investigated by rigorous device simulations. The simulation results show that the schemed TFET device shows improved dc characteristics including smaller subthreshold swing (S) and higher on-state current (Ion) in comparison to conventional TFETs. Device performances have been closely investigated by changing Ga fraction (x) in the In1-xGaxAs source-side channel region. Further, the dependences of radio-frequency (RF) performances including cut-off frequency (FT), gate-source capacitance (Cgs) with the schemed TFETs are examined as the source-channel length (Lsc) is scaled at different Ga fractions. The InGaAs TFET device shows superior dc and RF performances with optimized Ga fraction and geometric dimensions.

KW - Ga fraction

KW - InGaAs

KW - source-side channel

KW - tunneling field-effect transistor (TFET)

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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ER -

Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

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