Abstract
Graphene-metal contact is crucial to fabricate high-performance graphene photodetectors since the external quantum efficiency (EQE) of the photodetector depends on the contact properties, and the influence of the contact properties is particularly dominant in short channel devices for high-speed applications. Moreover, junction properties between the channel graphene and graphene near the contact are also important to analyze the photoresponse because the built-in electric field in the junction determines the EQE of the photodetector. In this study, we investigated a relation between the photoresponse and the built-in electric field induced from the doping level difference in the junction between the channel graphene and graphene near the contact. The photoresponse could be enhanced with a high junction barrier height that is tuned by the doping level difference. In addition, we observed that the improved electrical characteristics of channel graphene do not guarantee the enhancement of the photoresponse characteristics of graphene photodetectors.
| Original language | English |
|---|---|
| Article number | 4661 |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Sensors |
| Volume | 20 |
| Issue number | 17 |
| DOIs | |
| State | Published - 1 Sep 2020 |
Keywords
- Built-in electric field
- Doping level difference
- Graphene
- Graphene-metal contact
- Junction barrier height
- Photodetector