Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

K. Ip; K. H. Baik; M. E. Overberg; E. S. Lambers; Y. W. Heo; D. P. Norton; S. J. Pearton; F. Ren; J. M. Zavada

doi:10.1063/1.1519095

Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

K. Ip
, K. H. Baik
, M. E. Overberg
, E. S. Lambers
, Y. W. Heo
, D. P. Norton
, S. J. Pearton
, F. Ren
, J. M. Zavada

University of Florida
United States Army Research Office

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Bulk, single-crystal ZnO was etched in Cl₂/Ar and CH ₄/H₂/Ar inductively coupled plasmas as a function of ion impact energy. For CH₄/H₂/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E^0.5-E_TH ^0.5), where the threshold energy, E_TH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

Original language	English
Pages (from-to)	3546-3548
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519095
State	Published - 4 Nov 2002

Access to Document

10.1063/1.1519095

Cite this

@article{2947e5eed33a4ba9b30c2c487c988ce5,

title = "Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO",

abstract = "Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70\% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.",

author = "K. Ip and Baik, \{K. H.\} and Overberg, \{M. E.\} and Lambers, \{E. S.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\} and F. Ren and Zavada, \{J. M.\}",

year = "2002",

month = nov,

day = "4",

doi = "10.1063/1.1519095",

language = "English",

volume = "81",

pages = "3546--3548",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

AU - Ip, K.

AU - Baik, K. H.

AU - Overberg, M. E.

AU - Lambers, E. S.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Zavada, J. M.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

AB - Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

UR - https://www.scopus.com/pages/publications/79956057219

U2 - 10.1063/1.1519095

DO - 10.1063/1.1519095

M3 - Article

AN - SCOPUS:79956057219

SN - 0003-6951

VL - 81

SP - 3546

EP - 3548

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

Abstract

Access to Document

Other files and links

Fingerprint

Cite this