Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

K. Ip; K. H. Baik; M. E. Overberg; E. S. Lambers; Y. W. Heo; D. P. Norton; S. J. Pearton; F. Ren; J. M. Zavada

doi:10.1063/1.1519095

Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

K. Ip, K. H. Baik, M. E. Overberg, E. S. Lambers, Y. W. Heo, D. P. Norton, S. J. Pearton, F. Ren, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Bulk, single-crystal ZnO was etched in Cl₂/Ar and CH ₄/H₂/Ar inductively coupled plasmas as a function of ion impact energy. For CH₄/H₂/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E^0.5-E_TH ^0.5), where the threshold energy, E_TH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

Original language	English
Pages (from-to)	3546-3548
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519095
State	Published - 4 Nov 2002

Access to Document

10.1063/1.1519095

Cite this

@article{2947e5eed33a4ba9b30c2c487c988ce5,

title = "Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO",

abstract = "Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70\% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.",

author = "K. Ip and Baik, \{K. H.\} and Overberg, \{M. E.\} and Lambers, \{E. S.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\} and F. Ren and Zavada, \{J. M.\}",

year = "2002",

month = nov,

day = "4",

doi = "10.1063/1.1519095",

language = "English",

volume = "81",

pages = "3546--3548",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

AU - Ip, K.

AU - Baik, K. H.

AU - Overberg, M. E.

AU - Lambers, E. S.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Zavada, J. M.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

AB - Bulk, single-crystal ZnO was etched in Cl2/Ar and CH 4/H2/Ar inductively coupled plasmas as a function of ion impact energy. For CH4/H2/Ar, the etch rate (R) increases with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R∝(E0.5-ETH 0.5), where the threshold energy, ETH, is ∼96eV. Band edge photoluminescence intensity decreases with incident ion energy in both chemistries, with a 70% decrease even for low energies (∼116eV). Surface roughness is also a function of ion energy with a minimum at ∼250eV, where Auger electron spectroscopy shows there is no measurable change in near-surface stoichiometry from that of unetched control samples.

UR - https://www.scopus.com/pages/publications/79956057219

U2 - 10.1063/1.1519095

DO - 10.1063/1.1519095

M3 - Article

AN - SCOPUS:79956057219

SN - 0003-6951

VL - 81

SP - 3546

EP - 3548

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO

Abstract

Access to Document

Other files and links

Fingerprint

Cite this