Effect of high-pressure deuterium annealing with high-κ stack onto In_0.53Ga_0.47As MOS capacitors on 300 mm Si substrate

In this paper, we studied the passivation effects of deuterium (D₂) high-pressure annealing (HPA) on In_0.53Ga_0.47As MOS capacitors (MOSCAPs) on 300 mm Si substrate. We found that D₂ HPA is effective in improving capacitance-voltage (C-V) characteristics of the In_0.53Ga_0.47As MOSCAPs. A significant improvement in C-V hysteresis and frequency dispersion is observed, and, more importantly, the value of the interface trap density (D _it) considerably decreases when using the D₂ HPA. In addition, we explored the impact of HPA under other ambient conditions, such as H₂ HPA. The D₂ HPA yields better C-V characteristics and lower D _it in In_0.53Ga_0.47As MOSCAPs than H₂ HPA. Our findings in this work indicate that D₂ HPA would be an effective remedy to further passivate the interface quality between the gate dielectric and the In_0.53Ga_0.47As channel in III-V MOSFETs.