Effect of Indium doping on the electrical properties of solution-processed Mg0.2Zn0.8O thin film transistors

Jin Young Moon; Ho Seong Lee

doi:10.1007/s13391-017-6151-4

Effect of Indium doping on the electrical properties of solution-processed Mg_0.2Zn_0.8O thin film transistors

Jin Young Moon, Ho Seong Lee

Yonsei University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We fabricated solution-processed thin film transistors (TFTs) with In-doped Mg_0.2Zn_0.8O channel layers and investigated the effect of In doping on the device performance. With increasing In content in the Mg_0.2Zn_0.8O films, the off-current decreased and the threshold voltage shifted in the positive direction. This was due to the reduction in carrier concentration caused by In addition. Disordered atomic arrangements such as stacking faults were observed with increasing In content in the Mg_0.2Zn_0.8O thin films. Such structural defects could generate localized acceptor states, leading to a reduction in carrier concentration. These results suggest that In doping can be a useful technique to produce more reliable solution-processed Mg_0.2Zn_0.8O materials for TFTs and other applications. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	201-206
Number of pages	6
Journal	Electronic Materials Letters
Volume	13
Issue number	3
DOIs	https://doi.org/10.1007/s13391-017-6151-4
State	Published - 1 May 2017

Keywords

In-doping
MgZnO
thin film transistor

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10.1007/s13391-017-6151-4

Cite this

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title = "Effect of Indium doping on the electrical properties of solution-processed Mg0.2Zn0.8O thin film transistors",

abstract = "We fabricated solution-processed thin film transistors (TFTs) with In-doped Mg0.2Zn0.8O channel layers and investigated the effect of In doping on the device performance. With increasing In content in the Mg0.2Zn0.8O films, the off-current decreased and the threshold voltage shifted in the positive direction. This was due to the reduction in carrier concentration caused by In addition. Disordered atomic arrangements such as stacking faults were observed with increasing In content in the Mg0.2Zn0.8O thin films. Such structural defects could generate localized acceptor states, leading to a reduction in carrier concentration. These results suggest that In doping can be a useful technique to produce more reliable solution-processed Mg0.2Zn0.8O materials for TFTs and other applications. [Figure not available: see fulltext.]",

keywords = "In-doping, MgZnO, thin film transistor",

author = "Moon, {Jin Young} and Lee, {Ho Seong}",

note = "Publisher Copyright: {\textcopyright} 2017, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.",

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T1 - Effect of Indium doping on the electrical properties of solution-processed Mg0.2Zn0.8O thin film transistors

AU - Moon, Jin Young

AU - Lee, Ho Seong

PY - 2017/5/1

Y1 - 2017/5/1

N2 - We fabricated solution-processed thin film transistors (TFTs) with In-doped Mg0.2Zn0.8O channel layers and investigated the effect of In doping on the device performance. With increasing In content in the Mg0.2Zn0.8O films, the off-current decreased and the threshold voltage shifted in the positive direction. This was due to the reduction in carrier concentration caused by In addition. Disordered atomic arrangements such as stacking faults were observed with increasing In content in the Mg0.2Zn0.8O thin films. Such structural defects could generate localized acceptor states, leading to a reduction in carrier concentration. These results suggest that In doping can be a useful technique to produce more reliable solution-processed Mg0.2Zn0.8O materials for TFTs and other applications. [Figure not available: see fulltext.]

AB - We fabricated solution-processed thin film transistors (TFTs) with In-doped Mg0.2Zn0.8O channel layers and investigated the effect of In doping on the device performance. With increasing In content in the Mg0.2Zn0.8O films, the off-current decreased and the threshold voltage shifted in the positive direction. This was due to the reduction in carrier concentration caused by In addition. Disordered atomic arrangements such as stacking faults were observed with increasing In content in the Mg0.2Zn0.8O thin films. Such structural defects could generate localized acceptor states, leading to a reduction in carrier concentration. These results suggest that In doping can be a useful technique to produce more reliable solution-processed Mg0.2Zn0.8O materials for TFTs and other applications. [Figure not available: see fulltext.]

KW - In-doping

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DO - 10.1007/s13391-017-6151-4

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Effect of Indium doping on the electrical properties of solution-processed Mg_0.2Zn_0.8O thin film transistors

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