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Effect of interfacial oxide layer on the switching uniformity of Ge 2Sb2Te5-based resistive change memory devices

  • Jiyong Woo
  • , Seungjae Jung
  • , Manzar Siddik
  • , Euijun Cha
  • , Sharif Md. Sadaf
  • , Hyunsang Hwang

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

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