Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors

Ho Beom Kim; Ho Seong Lee

doi:10.1016/j.tsf.2013.10.116

Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors

Ho Beom Kim
, Ho Seong Lee

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm²/V·s, on/off ratio of 3.3 × 10⁶, off-current of 5.3 × 10^{- 12}A, and threshold voltage of 5.4 V.

Original language	English
Pages (from-to)	504-508
Number of pages	5
Journal	Thin Solid Films
Volume	550
DOIs	https://doi.org/10.1016/j.tsf.2013.10.116
State	Published - 1 Jan 2014

Keywords

Bias-stress stability
Magnesium zinc tin oxide
Sol-gel
Thin-film transistor

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10.1016/j.tsf.2013.10.116

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title = "Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors",

abstract = "Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol\% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm2/V·s, on/off ratio of 3.3 × 106, off-current of 5.3 × 10- 12A, and threshold voltage of 5.4 V.",

keywords = "Bias-stress stability, Magnesium zinc tin oxide, Sol-gel, Thin-film transistor",

author = "Kim, \{Ho Beom\} and Lee, \{Ho Seong\}",

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T1 - Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors

AU - Kim, Ho Beom

AU - Lee, Ho Seong

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm2/V·s, on/off ratio of 3.3 × 106, off-current of 5.3 × 10- 12A, and threshold voltage of 5.4 V.

AB - Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm2/V·s, on/off ratio of 3.3 × 106, off-current of 5.3 × 10- 12A, and threshold voltage of 5.4 V.

KW - Bias-stress stability

KW - Magnesium zinc tin oxide

KW - Sol-gel

KW - Thin-film transistor

UR - https://www.scopus.com/pages/publications/84890311288

U2 - 10.1016/j.tsf.2013.10.116

DO - 10.1016/j.tsf.2013.10.116

M3 - Article

AN - SCOPUS:84890311288

SN - 0040-6090

VL - 550

SP - 504

EP - 508

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors

Abstract

Keywords

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